Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters (2019)

First Author: Cui M
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/1347-4065/ab1313

Publication URI: http://dx.doi.org/10.7567/1347-4065/ab1313

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 5