Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs (2018)

First Author: Cui M
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/edssc.2018.8487160

Publication URI: http://dx.doi.org/10.1109/edssc.2018.8487160

Type: Conference/Paper/Proceeding/Abstract