Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN (2018)

First Author: Kumar A

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5021306

Publication URI: http://dx.doi.org/10.1063/1.5021306

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 15