The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation (2020)

First Author: Ahmeda K
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2020.113965

Publication URI: http://dx.doi.org/10.1016/j.microrel.2020.113965

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability