Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure (2021)
Attributed to:
Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0047036
Publication URI: http://dx.doi.org/10.1063/5.0047036
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 17