The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse-Biased Silicon n + -p Diodes upon Irradiation with Alpha Particles (2021)
Attributed to:
Light and Elevated Temperature Induced Degradation of Silicon Solar Cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.202100104
Publication URI: http://dx.doi.org/10.1002/pssa.202100104
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 23