High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/Al x Ga1- x As heterostructure (2021)
Attributed to:
Non-Ergodic Quantum Manipulation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0053816
Publication URI: http://dx.doi.org/10.1063/5.0053816
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 6