Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization (2022)

First Author: Baker G

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2022.3152460

Publication URI: http://dx.doi.org/10.1109/ted.2022.3152460

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4