Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs (2019)

First Author: Perkins S
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/demped.2019.8864919

Publication URI: http://dx.doi.org/10.1109/demped.2019.8864919

Type: Conference/Paper/Proceeding/Abstract