Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C (2022)
Attributed to:
Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0079195
Publication URI: http://dx.doi.org/10.1063/5.0079195
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 3