Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN (2022)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.202200545
Publication URI: http://dx.doi.org/10.1002/pssb.202200545
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 8