The Role of Selective Pattern Etching to Improve the Ohmic Contact Resistance and Device Performance of AlGaN/GaN HEMTs (2021)

First Author: Dhongde A.
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Journal Article/Review

Volume: 14

Parent Publication: INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS

ISSN: 1985-5761