Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors (2024)

First Author: Bestelink E
Attributed to:  Low Dimensional Electronic Device Fabrication at Low Cost over Large Areas: Follow-on funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2023.3331668

Publication URI: http://dx.doi.org/10.1109/ted.2023.3331668

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1