Lateral 1200v Sic Schottky Barrier Diode with Single Event Burnout Tolerance (2024)
Attributed to:
Silicon Carbide Power Conversion for Telecommunications Satellite Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.2139/ssrn.4733583
Publication URI: http://dx.doi.org/10.2139/ssrn.4733583
Type: Preprint