Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE. (2024)
Attributed to:
Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6528/ad3741
PubMed Identifier: 38522101
Publication URI: http://europepmc.org/abstract/MED/38522101
Type: Journal Article/Review
Volume: 35
Parent Publication: Nanotechnology
Issue: 26
ISSN: 0957-4484