Ti Alloyed a-Ga2O3: Route towards Wide Band Gap Engineering. (2020)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.65575
Publication URI: https://www.repository.cam.ac.uk/handle/1810/318461
Type: Journal Article/Review