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Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates (2024)

First Author: Chen Z

Attributed to: Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0222572

Publication URI: http://dx.doi.org/10.1063/5.0222572

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 9