2F88246E-449F-4F7F-AC6F-BFFCFD34FEFDDevelopment of an integrated optical E-Probe for GaN power transistor reliability analysisResearch GrantEP/H037853/1798CB33D-C79E-4578-83F2-72606407192CEPSRCINCOME_ACTUAL305011ECFBB5F5-8526-42E7-8546-CD5B0A1EF54AEffects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Effect of gate shaping on AlGaN/GaN HEMTs reliabilityphysica status solidi (a)e4adad2fd61f589b53fb44f75e81c689Möreke J2012-01-01http://dx.doi.org/10.1002/pssa.201228395http://dx.doi.org/10.1002/pssa.20122839512Journal Article/Reviewdoi_53cfc8fc8aef2ca4