Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices (2011)

First Author: Novikov S
Attributed to:  Amorphous and crystalline GaNAs alloys for solar energy conversion devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.11.064

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.11.064

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 1