Device processing and characterisation of high temperature silicon carbide Schottky diodes (2006)

First Author: Vassilevski K
Attributed to:  Power Electronics for Adverse High Temperature Environments (PEATE) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2005.10.041

Publication URI: http://dx.doi.org/10.1016/j.mee.2005.10.041

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 1