1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack (2009)

First Author: Yan L
Attributed to:  Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2009.07.007

Publication URI: http://dx.doi.org/10.1016/j.sse.2009.07.007

Type: Journal Article/Review

Parent Publication: Solid-State Electronics

Issue: 11