Top-gated silicon nanowire transistors in a single fabrication step. (2009)
Attributed to:
Device Electronics Based on nanoWires and NanoTubes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/nn900284b
PubMed Identifier: 19425540
Publication URI: http://europepmc.org/abstract/MED/19425540
Type: Journal Article/Review
Volume: 3
Parent Publication: ACS nano
Issue: 6
ISSN: 1936-0851