1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/µm (2008)

First Author: Hill R

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el:20080470

Publication URI: http://dx.doi.org/10.1049/el:20080470

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 7