Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography (2008)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3035855
Publication URI: http://dx.doi.org/10.1063/1.3035855
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 20