Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire (2009)

First Author: Wang Q
Attributed to:  Fabrication of first 337 nm laser diodes for biological applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3253416

Publication URI: http://dx.doi.org/10.1063/1.3253416

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 16