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On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress (2012)

First Author: Montes Bajo M

Attributed to: Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4737904

Publication URI: http://dx.doi.org/10.1063/1.4737904

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 3