Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates (2013)
Attributed to:
Development of an epitaxial lift-off technique for II-VI semiconductor heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4788741
Publication URI: http://dx.doi.org/10.1063/1.4788741
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 3