Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes (2013)

First Author: Pilgrim N

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4798582

Publication URI: http://dx.doi.org/10.1063/1.4798582

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 14