Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes (2013)
Attributed to:
Near infrared single photon detection using Ge-on-Si heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4798582
Publication URI: http://dx.doi.org/10.1063/1.4798582
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 14