Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model (2013)

First Author: Kiani A
Attributed to:  Printed Logic Supply Chain (FlexIC) - TSB App. No. 155 funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4801991

Publication URI: http://dx.doi.org/10.1063/1.4801991

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 15