Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using " Ab Initio " Ionized Impurity Scattering (2008)

First Author: Alexander C
Attributed to:  Meeting the design challenges of the nano-CMOS electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2008.2004647

Publication URI: http://dx.doi.org/10.1109/ted.2008.2004647

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 11