Interlayer methods for reducing the dislocation density in gallium nitride (2007)

First Author: Kappers M
Attributed to:  Defect reduction in GaN using the in-situ growth of transition metal nitride layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.physb.2007.08.170

Publication URI: http://dx.doi.org/10.1016/j.physb.2007.08.170

Type: Journal Article/Review

Parent Publication: Physica B: Condensed Matter