Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. (2014)

First Author: Busche C
Attributed to:  Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/nature13951

PubMed Identifier: 25409147

Publication URI: http://europepmc.org/abstract/MED/25409147

Type: Journal Article/Review

Volume: 515

Parent Publication: Nature

Issue: 7528

ISSN: 0028-0836