Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC (2009)
Attributed to:
Development of Radiation-Hard Single-Sided Silicon Pixel Detectors using Planar p-type Technology
funded by
STFC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tns.2009.2012856
Publication URI: http://dx.doi.org/10.1109/tns.2009.2012856
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Nuclear Science
Issue: 3
ISSN: 0018-9499