Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
Lead Research Organisation:
University of Essex
Department Name: Computer Sci and Electronic Engineering
Abstract
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Organisations
People |
ORCID iD |
| Naci Balkan (Principal Investigator) | |
| Michael Adams (Co-Investigator) |
Publications
S.B. Lisesivdin
(2014)
Optical gain in 1.3-µm electrically driven dilute nitride VCSOAs
S.B. Lisesivdin
(2014)
Optical gain in 1.3-µm electrically driven dilute nitride VCSOAs
Naci Balkan (Author)
(2011)
1.3 micrometer Dilute Nitride HELLISH-VCSOAs
Mazzucato S
(2012)
1.3 to 1.55 $\mu\hbox{m}$ All-Optical Wavelength Conversion for VCSEL-to-VCSEL Inversion and Logic
in IEEE Photonics Journal
Mazzucato S
(2012)
1.55 µm distributed feedback (DFB) lasers subject to strong 1.4 µm optical injection
in Optics Communications
M. J Adams (Author)
(2013)
Recent Progress on Dilute Nitride VCSELs and VCSOAs
Lisesivdin SB
(2014)
Optical gain in 1.3-µm electrically driven dilute nitride VCSOAs.
in Nanoscale research letters
Khalil H
(2012)
Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures
in Materials Science and Engineering: B
Faten Chaqmaqchee (Author)
(2013)
Gain Characteristic of Dilute Nitride HELLISH-VCSOA for 1.3 micrometer Wavelength Operation
Faten Chaqmaqchee (Author)
(2013)
Top Hat HELLISH VCSOA for optical amplification and wavelength conversion for 1.3 to 0.85 micrometer operation
| Description | Conventional VCSOAs based on GaInNAs/GaAs for electrical pumping require very sophisticated fabrication techiques, with a small gain. Optical pumping appears to give the best results. Best GaInNAs VCSOA devices operated by electrical injection are based on a design that utilizes longitudinal transport. |
| Exploitation Route | It may be used by industry in telecom applications Publication in scientific journals, presentation at high profile conferences |
| Sectors | Electronics |