ETOE - II

The UK has substantial technical and market presence in semiconductor optoelectronics. To remain competitive, significant reductions in cost and power consumption are required, along with increased device functionality. This can be achieved through device integration and reductions in active cooling. ETOE II builds on the success of an existing project (ETOE), which demonstrated the use of new materials (AlInGaAs/InP) in high performance devices operating at high temperatures. ETOE II takes this research forward by addressing devices with higher functionality, eliminating yield hazards in processing complex laser structures based on the new materials and understanding the factors affecting reliability. Radically new materials systems will also be investigated for their long-term potential to improve efficiency at high temperatures whilst retaining industrial process compatibility.