PEARGaN - Power Electronics Applications for Reliability in GaN

Gallium Nitride (GaN) is being grown on Silicon substrates by the semiconductor manufactures to create discrete devices for high-voltage power electronics applications, with the potential to deliver superior performance in breakdown voltage, on-state resistance and higher switching speeds, reducing system losses and enabling greater levels of efficiency at lower cost than current solutions. The PEARGaN project has assembled a consortium of world class partners from UK industry and academia, to develop new system level concepts and circuit architectures, evaluate advanced manufacturing process technologies and create device demonstrators to fully understand the device behaviour and failure mechanisms, proving that these devices are robust and can deliver the required levels of life-time reliability that is demanded by the early adopters in a broad range of power management and control applications.