To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide on

silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the

University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power

devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single

phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon

wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.

Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large

diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages the

inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to

produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect

on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.