M-PowerD - Manufacturing PSJ GaN Power Devices in the UK

**M-PowerD --** **M**anufacturing PSJ GaN **Power D**evices in the UK

This is a project to build capability in the UK's only commercial GaN fab, INEX Microtechnology Ltd, to manufacture the world's first, low cost, high voltage GaN power transistors. Our project aims to develop a polarisation super-junction high electron mobility transistor (PSJ HEMT) and process wholly in the UK. We will use this project to build a low cost bi-directional 3kV GaN PSJ HEMT.

Gallium Nitride (GaN) is a semiconductor like silicon, but it can be used to make higher performance power transistors than silicon. Silicon carbide is another high-performance semiconductor, but GaN has greater potential for cost reduction.

PSJ technology is a patented break-through concept for GaN developed in the University of Sheffield with Powdec of Japan. This concept enables ultra-high-performance power devices that have been proven to achieve more than 3x higher voltage than existing GaN technologies.

We will use the PSJ technology to make bi-directional transistors. Bi-directional transistors can switch AC more efficiently and at lower cost than the conventional approach using two transistors back-to-back. Bi-directional transistors are not available commercially at present, so our project will be a key enabler for new power electronics, machines and drives (PEMD) applications. Our initial target application will be for a smart power grid to replace the UK's ageing infrastructure.

There are three partners in the consortium:

The **University of Sheffield (UoS)** who will design the device, and wafer and will work with INEX to develop the process and publish the results.

**INEX** **Microtechnology Limited** who will develop their power GaN processing capabilities to manufacture test structures and complete wafers of these PSJ GaN HEMTs. This capability will place INEX as world class manufacturing facility for power GaN.

The **Compound Semiconductor Applications Catapult (CSAC)** who will define target applications for these devices, test the completed parts and publish the results.