GaNSiC

Project GaNSiC (Gallium Nitride Silicon Carbide) will develop a unique manufacturing process for electronic devices based on Compound Semiconductors (CS). Next-generation electronic devices will be based on technologies such as GaN and SiC which enable processing speeds up to 100x faster than silicon transistors.

GaNSiC will develop an ink jet/direct dispense manufacturing process that deposits a silver sinter paste onto pre-populated circuit boards to provide a suitable die-attachment method meeting CIL's mechanical and thermal efficiency requirements. Focus of the innovation will be given to the following: (1) Process Development: using existing material jetting hardware within CIL, GaNSiC will demonstrate the feasibility of an automated manufacturing process that can selectively place silver sinter paste onto pre-populated circuit boards and (2) Quality & Validation: This technology will be used by demanding industries who will require evidence that the die attach layer is of a sufficient quality. This will be achieved using X-Ray, CSAM, SEM, FTIR and EDX imaging and comprehensive thermal and dynamic testing.

GaNSiC brings together experts in electronics manufacturing, material jetting and SiC/GaN device design. GaNSiC will quickly develop a required manufacturing process that will readily be commercialised as it would meet customers' requirements. It will enable both SiC and GaN arrays to be incorporated into mixed technology products enabling the development of next-generation SiC and GaN products. This innovation will result in an entirely unique SiC and GaN die attach capability in the UK, if not globally.