SiC-MAP

Project SiC-MAP, **S**ilicon **C**arbide **M**OSFET **A**pplications unlocked by **P**DK, takes the 1200V planar SiC MOSFET process, which Clas-SiC is developing, and develops it further to include 1700V and 3300V capability. Once the 1700V and 3300V capabilities have been demonstrated, SiC-MAP will then go on to extract relevant electrical parameters from the fabricated SiC MOSFET's (including reliability) along with design and layout parameters, into a Process Design Kit (PDK) (a PDK is quite simply a menu of options which the designer can choose from to construct his device, along with a set of limitations he must abide within so that the device can be feasibly fabricated and be expected to pass basic reliability testing).

The PDK will then be made generally available such that customers with a custom power device requirement can use this PDK to define their device which can then be fabricated at Clas-SiC Wafer Fab in Scotland using standard design elements, process modules and processes. Having a PDK available for SiC power devices is not an option which is known to be available in commercial SiC power device foundries (but it is a very common practice within the silicon integrated circuit industry). The lack of a PDK means that customers are limited to selecting standard devices off the shelf, from manufacturers such as Cree or Infineon, or commissioning a custom product of their own design, which can be lengthy, expensive, and not without risk.

Innovation lies in Clas-SiC's PDK which will initially enable customers to have 1200V SiC MOSFET devices tailored to their specific requirements using established design elements, modules and processes which have had basic reliability proven. For the customer, this will de-risk and shorten the time to market for New Product Introduction (NPI).