Optimising GaN light emitting structures on free-standing GaN substrates
Lead Research Organisation:
University of Cambridge
Department Name: Materials Science & Metallurgy
Abstract
Gallium nitride (GaN) is an amazing material that can emit brilliant light. GaN light emitting diodes (LEDs) first became available about ten years ago, and are already used in a wide range of applications, including interior lighting in cars, buses and planes; traffic lights, large full-colour displays and backlighting in mobile phones. GaN blue lasers are about to be sold for next-generation DVD players, in which the DVDs will contain more than five times the amount of music or pictures as existing DVDs. Looking to the future, GaN may make possible high-quality, high efficiency white lighting which will produce major energy savings. Another exciting development could be high-efficiency deep ultra-violet LEDs for water purification, particularly in the developing world.Unfortunately, we are currently unable to make the high-efficiency white lighting and deep-UV LEDs referred to above because there are some key scientific problems that remain to be solved. To successfully surmount these challenges requires a detailed understanding of the complex processes involved in the fabrication of the light emitting regions of the LED. These consist of thin layers of an alloy called InGaN, which are sandwiched between thicker layers of GaN to make structures called quantum wells. These quantum wells are 50,000 times thinner than a human hair. We must also understand the processes that limit light emission and optimise the electrical conductivity of the many other semiconductor layers in an LED.A major problem with GaN materials and devices is understanding the role of defects called dislocations. GaN devices are normally grown on sapphire or SiC. Because GaN has different atomic spacings from the atoms in sapphire or SiC, a very high number of dislocations are formed when GaN is grown on these materials. Recently free-standing bulk GaN with far fewer dislocations has become available in limited quantities. Because it is very difficult to grow, it is expensive. However, two producers of this material, Samsung Corning and Lumilog, have offered us some of this material free-of-charge, so that we can optimise the growth of GaN light-emitting structures: both blue and green. This is a wonderful opportunity to do this. As far as we are aware, no one in the world has grown green LEDs on GaN substrates. This research will not only produce blue and green LEDs, it will also help us to understand the role of dislocations in GaN LEDs.
Publications
Badcock T
(2012)
Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
in Journal of Applied Physics
Cerezo A
(2007)
Atom probe tomography today
in Materials Today
Costa P
(2006)
Misfit dislocations in In-rich InGaN/GaN quantum well structures
in physica status solidi (a)
Datta R
(2006)
Mechanisms of bending of threading dislocations in MOVPE-grown GaN on (0001) sapphire
in physica status solidi c
De?Sousa?Pereira S
(2008)
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano-Pits at the Surface of Light-Emitting Heterostructures
in Advanced Materials
Galtrey M
(2007)
Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering
in Applied Physics Letters
Galtrey M.
(2007)
Atom probe provides evidence to question InGaN cluster theory
in Compound Semiconductor
Graham D
(2007)
High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
in Journal of Applied Physics
Graham D
(2006)
The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures
in physica status solidi c
Description | Nitrides for the 21st century (Platform Grant) |
Amount | £826,500 (GBP) |
Funding ID | EP/H019324/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 11/2009 |
End | 10/2014 |
Description | Science Bridge Award USA: Harnessing Materials for Energy |
Amount | £1,447,635 (GBP) |
Funding ID | EP/G042330/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 04/2009 |
End | 10/2012 |
Description | Thomas Swan Scientific Equipment Ltd |
Organisation | Thomas Swan and Co Ltd |
Country | United Kingdom |
Sector | Private |
Start Year | 2006 |
Description | BBC Breakfast TV and BBC Radio "You and Yours" |
Form Of Engagement Activity | A press release, press conference or response to a media enquiry/interview |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Public/other audiences |
Results and Impact | Interview of Prof Humphreys on BBC Breakfast TV, and on the BBC Radio "You and Yours" on low-cost LEDS sparked a lot of discussions Increased public awareness of LEDs |
Year(s) Of Engagement Activity | 2009 |
Description | Big Bang Fair (London) |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | Yes |
Geographic Reach | National |
Primary Audience | Schools |
Results and Impact | Encouraged school pupils to study science Schools reported increased interest in science and increased numbers studying science |
Year(s) Of Engagement Activity | 2013,2014 |
Description | Chelterham Science Festival |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | Yes |
Geographic Reach | National |
Primary Audience | Schools |
Results and Impact | More school pupils studying science Schools reported greater interest in science. |
Year(s) Of Engagement Activity | 2013,2014 |