Follow On: Development of high-speed & low-cost nanoelectronic switch devices for RFID applications
Lead Research Organisation:
University of Manchester
Department Name: Electrical and Electronic Engineering
Abstract
Dr Aimin Song and his co-workers at the University of Manchester have developed and patented novel SelfSwitching Devices (SSD), including diodes and transistors, which are simpler, cheaper and faster than previous organic electronics devices. These advantages arise from the simplicity of the SSD single layer, planar structures, which differentiate them from conventional semiconductor devices which are multilayer, vertical structures. SSD's have a number of potential applications ranging from printed Radio Frequency Identification Tags (RFID) to drivers for rollable computer displays and intelligent disposable sensors. The purpose of the project is threefold:1. To design, fabricate and test a SSD based high speed microwave rectifier and antenna for demonstration to RFID vendors.2. To prove the feasibility of manufacturing SSDs by a simple one step nanolithography process which isdramatically simpler than the number of steps used for existing semiconductor technology.3. To market the SSD demonstrators to a number of potential development partners and licensees, and to raise the first round of external VC seed funding.
People |
ORCID iD |
Aimin Song (Principal Investigator) |
Publications
Balocco C
(2006)
Non-destructive patterning of conducting-polymer devices using subtractive photolithography
in Organic Electronics
Majewski L
(2007)
Extended storage time of poly(3-hexylthiophene) field-effect transistors via immersion in common solvents
in Journal of Applied Physics
Majewski L
(2016)
20 megahertz operation of organic nanodiodes 20 megahertz operation of organic nanodiodes
in physica status solidi (b)
Majewski L
(2008)
Fast polymer nanorectifiers for inductively coupled RFID tags
in Materials Science and Engineering: B
Majewski L
(2006)
Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors
in Applied Physics Letters