Silicon Resonant Tunnelling Diodes and Circuits
Lead Research Organisation:
University of Warwick
Department Name: Physics
Abstract
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Organisations
People |
ORCID iD |
| David Leadley (Principal Investigator) | |
| Evan Parker (Co-Investigator) |
Publications
Dumas D
(2014)
Silver antimony Ohmic contacts to moderately doped n-type germanium
in Applied Physics Letters
Gallacher K
(2013)
Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process
in ECS Transactions
| Description | Extremely thin (1 nm) epitaxial layers were produced to act as tunnel barriers. Uniform thickness of layers over 200mm diameter wafer. Demonstration of ohmic contacts to Ge and SiGe regions using Ni. |
| Exploitation Route | Further research needed before exploitable as RTDs, but technology of contacting could be useful. |
| Sectors | Electronics |
| Description | Creating silicon based platforms for new technologies |
| Amount | £1,680,000 (GBP) |
| Funding ID | EP/J001074/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 03/2012 |
| End | 02/2017 |