Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
Lead Research Organisation:
University of Nottingham
Department Name: Sch of Physics & Astronomy
Abstract
The group III-nitride semiconductors (AlN, GaN and InN and their solid solutions) are being increasingly used for amber, green, blue and white light emitting diodes (LEDs), for blue/UV laser diodes (LDs) and for high-power, high-frequency and high temperature electronic devices. However, one of the most severe problems hindering progress in this field is the rarity of suitable substrates. AlN, GaN, InN and their solid solutions are commonly grown on non-lattice matched substrates e.g. sapphire, GaAs or SiC, but bulk GaN and AlN substrates would be much better for the highest-quality nitride-based devices. For AlGaN-based devices for ultra-violet optoelectronics and for high frequency applications at high power levels, AlN substrates would be ideal. AlN substrates have higher radiation hardness and superior thermal conductivity compared to GaN. There is a measurable difference in the lattice parameters of GaN and AlN, therefore for several device applications AlGaN substrates would be preferable to either GaN or AlN. Success in producing cubic AlN and AlGaN substrates would mean our technology could be extended commercially to water sterilization, bioterrorism detection, satellite communication and data storage devices.The group III-nitrides normally crystallise in the hexagonal (wurtzite) structure. The unique feature of wurtzite group III-nitrides, in comparison with conventional III-V semiconductors, is the existence of very strong electric fields inside the crystal structure. These reduce the optical emission intensity in quantum wells, due to charge separation. The electric fields can be eliminated in wurtzite material by growing in non-polar directions. However, a direct way to eliminate electric fields would be to use non-polar (100) oriented zinc-blende (cubic) III-nitride layers. The thermodynamically metastable cubic GaN and AlN layers have, so far, received less attention than the more familiar hexagonal films. However, interest in zinc-blende nitrides is now rapidly increasing for three main reasons: 1) the absence of electric fields in cubic (100) nitrides; 2) the ability to cleave cubic (100) nitrides in the perpendicular cleavage planes and 3) the enhanced mobility of the carriers (particularly p-type). Recently we have demonstrated for the first time that it is possible to grow free-standing zinc-blende GaN layers by plasma-assisted molecular beam epitaxy (PA-MBE) with potential applications as substrates. We are not aware of any data or publications to-date on free-standing zinc-blende AlN or AlGaN layers. The main aims of this project are feasibility studies of the growth of free-standing zinc-blende (cubic) AlN and AlGaN layers by PA-MBE and a comprehensive analysis of their structural, optical and transport properties. This is the first step towards developing commercially viable cubic nitride substrates.
Organisations
Publications
Cuscó R
(2015)
Anharmonic phonon decay in cubic GaN
in Physical Review B
He C
(2015)
Study of confined coherent acoustic phonon modes in a free-standing cubic GaN membrane by femtosecond spectroscopy
in Applied Physics Letters
Lee S
(2014)
Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy
in Materials Chemistry and Physics
Levander A
(2011)
Thermal stability of amorphous GaN1-xAsx alloys
in Applied Physics Letters
Möreke J
(2014)
Investigation of the GaN-on-GaAs interface for vertical power device applications
in Journal of Applied Physics
Novikov S
(2011)
Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy
in physica status solidi c
Novikov S
(2011)
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
in Journal of Crystal Growth
Novikov S
(2017)
Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N
in Progress in Crystal Growth and Characterization of Materials
Novikov S
(2015)
Molecular beam epitaxy of free-standing wurtzite Al Ga1-N layers
in Journal of Crystal Growth
Novikov S
(2010)
Growth and characterization of free-standing zinc-blende GaN layers and substrates
in physica status solidi (a)
Title | "Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy" |
Description | Phys. Status Solidi C, 2011, V.8, N.5 - Front Cover S V Novikov, C T Foxon, A J Kent "Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy" |
Type Of Art | Image |
Description | The group III-nitride semiconductors (AlN, GaN and InN and their solid solutions) are being increasingly used for amber, green, blue and white light emitting diodes (LEDs), for blue/UV laser diodes (LDs) and for high-power, high-frequency and high temperature electronic devices. However, one of the most severe problems hindering progress in this field is the rarity of suitable substrates. AlN, GaN, InN and their solid solutions are commonly grown on non-lattice matched substrates e.g. sapphire, GaAs or SiC, but bulk GaN and AlN substrates would be much better for the highest-quality nitride-based devices. For AlGaN-based devices for ultra-violet optoelectronics and for high frequency applications at high power levels, AlN substrates would be ideal. AlN substrates have higher radiation hardness and superior thermal conductivity compared to GaN. There is a measurable difference in the lattice parameters of GaN and AlN, therefore for several device applications AlGaN substrates would be preferable to either GaN or AlN. Success in producing cubic AlN and AlGaN substrates would mean our technology could be extended commercially to water sterilization, bioterrorism detection, satellite communication and data storage devices. The group III-nitrides normally crystallise in the hexagonal (wurtzite) structure. The unique feature of wurtzite group III-nitrides, in comparison with conventional III-V semiconductors, is the existence of very strong electric fields inside the crystal structure. These reduce the optical emission intensity in quantum wells, due to charge separation. The electric fields can be eliminated in wurtzite material by growing in non-polar directions. However, a direct way to eliminate electric fields would be to use non-polar zinc-blende (cubic) III-nitride layers. The thermodynamically metastable cubic GaN and AlN layers have, so far, received less attention than the more familiar hexagonal films. However, interest in zinc-blende nitrides is now rapidly increasing for three main reasons: 1) the absence of electric fields in cubic nitrides; 2) the ability to cleave cubic nitrides in the perpendicular cleavage planes and 3) the enhanced mobility of the carriers (particularly p-type). The main aims of this project were feasibility studies of the growth of free-standing zinc-blende (cubic) AlN and AlGaN layers by plasma-assisted molecular beam epitaxy (PA-MBE) and a comprehensive analysis of their structural, optical and transport properties. We have studied the growth of zinc-blende (cubic) GaN and AlGaN layers and bulk crystals by PA-MBE. MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 micron in thickness. Thick, cubic GaN films were grown on semi-insulating GaAs substrates by a PA-MBE and were removed from the substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30-100 microns range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated the scalability of the process by growing GaN layers up to 3-inch in diameter. We have developed procedures to cleave the wafers and to polish them to produce epi-ready surfaces. We have demonstrated that the PA-MBE process we have developed also allows us to achieve free-standing zinc-blende AlGaN wafers over the entire composition range from GaN to nearly pure AlN. This is the first step towards developing commercially viable cubic nitride substrates. |
Exploitation Route | The group III-nitride semiconductors (AlN, GaN and InN and their solid solutions) are being increasingly used for amber, green, blue and white light emitting diodes (LEDs), for blue/UV laser diodes (LDs) and for high-power, high-frequency and high temperature electronic devices. However, one of the most severe problems hindering progress in this field is the rarity of suitable substrates. AlN, GaN, InN and their solid solutions are commonly grown on non-lattice matched substrates e.g. sapphire, GaAs or SiC, but bulk GaN and AlN substrates would be much better for the highest-quality nitride-based devices. We have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 micron in thickness. |
Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
Description | We have studied the growth of zinc-blende (cubic) GaN and AlGaN layers and bulk crystals by PA-MBE. MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 micron in thickness. Thick, cubic GaN films were grown on semi-insulating GaAs substrates by a PA-MBE and were removed from the substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30-100 microns range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated the scalability of the process by growing GaN layers up to 3-inch in diameter. We have developed procedures to cleave the wafers and to polish them to produce epi-ready surfaces. We have demonstrated that the PA-MBE process we have developed also allows us to achieve free-standing zinc-blende AlGaN wafers over the entire composition range from GaN to nearly pure AlN. This is the first step towards developing commercially viable cubic nitride substrates. |
First Year Of Impact | 2009 |
Sector | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
Impact Types | Economic |
Description | Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. |
Amount | £688,438 (GBP) |
Funding ID | EP/K008323/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 08/2013 |
End | 01/2017 |