Learning to control structure and properties of nano-scale ferroelectrics using defects
Lead Research Organisation:
University of Edinburgh
Department Name: Sch of Physics and Astronomy
Abstract
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Organisations
People |
ORCID iD |
| Jason Crain (Principal Investigator) |
Publications
Kimmel AV
(2013)
Neutral and Charged Oxygen Vacancies Induce Two-Dimensional Electron Gas Near SiO2/BaTiO3 Interfaces.
in The journal of physical chemistry letters
Kimmel AV
(2012)
Defect-mediated lattice relaxation and domain stability in ferroelectric oxides.
in Physical review letters
Kimmel AV
(2015)
Mechanisms of formation of chemical bonding and defect formation at the a-SiO2/BaTiO3 interfaces.
in Journal of physics. Condensed matter : an Institute of Physics journal
Magdau I
(2015)
The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications
in Applied Physics Letters
Wang Y
(2013)
Optical Absorption and Band Gap Reduction in (Fe 1- x Cr x ) 2 O 3 Solid Solutions: A First-Principles Study
in The Journal of Physical Chemistry C
| Description | The initial PE materials of interest for the PET have been the relaxor piezoelectrics discovered in the 1990's for actuation. Currently the only viable candidate PR materials are rare earth intermediate valence chalcogenide compounds such as SmSe and SmxEu1-xS [3]. The transition in these materials is iso-structural avoiding hysteresis and allowing for a continuous change in resistivity of several orders of magnitude. However, several GPa of pressure are required to switch them which necessitates technological breakthroughs in piezoelectric actuator size scaling and processing. The key result is the demonstration that within the existing materials palette, the PET device can be electronically switched at voltages approaching an order of magnitude lower than conventional CMOS transistors. Two publications have been produced and two more are in the pipeline. Overall, the results are part of an emerging portfolio of data which gives confidence in the developmental pathway towards a deployable high-performance, low-power device on a 10-15 year time horizon. |
| Exploitation Route | There is currently a major Horizon 2020 bid just underway to take forward a version of the basic ideas to design a piezoelectronic memory element. |
| Sectors | Electronics |
| Description | The award has contributed to the development of a novel piezoelectronic transistor design currently being developed by IBM research. |
| First Year Of Impact | 2015 |
| Sector | Electronics |
| Impact Types | Economic |