High permittivity dielectrics on Ge for end of Roadmap application

Lead Research Organisation: University of Cambridge
Department Name: Engineering

Abstract

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Description We discovered the best ways to passivate Ge surfaces by oxides, for CMOS devices. The oxides and the interfaces were characterised by our partners Liverpool University.
We also published a model for the oxidation of Ge in APL which is different to the standard Deal Grove model of the oxidation on Si. This explains the unusual T and pressure dependence of the oxidation rate.
Large scale review article with US author.
Exploitation Route From ALD precursor chemicals also studied at Liverpool University.
Greater understanding of Ge/GeO2 interface. Recent APL paper gives understanding of why the Ge/GeO2 interface differs from the Si/SiO2 interface, the fundamental interface behind CMOS electronics, is the different diffusion mechanism of O to the interface in GeO2
Sectors Electronics

 
Description Forming collaborations with other non-UK partners, and interactions with supporting partners.
First Year Of Impact 2014
Sector Electronics
Impact Types Economic