High permittivity dielectrics on Ge for end of Roadmap application
Lead Research Organisation:
University of Cambridge
Department Name: Engineering
Abstract
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Organisations
People |
ORCID iD |
John Robertson (Principal Investigator) |
Publications
Gillen R
(2012)
Electron spin resonance signature of the oxygen vacancy in HfO 2
in Applied Physics Letters
Gillen R
(2013)
Electronic structure of lanthanide oxide high K gate oxides
in Microelectronic Engineering
Guo Y
(2014)
Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements
in Applied Physics Letters
Guo Y
(2016)
AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
in Journal of Applied Physics
Huang B
(2014)
Study of CeO 2 and Its Native Defects by Density Functional Theory with Repulsive Potential
in The Journal of Physical Chemistry C
Li H
(2013)
Defects at Ge:GeO2 and Ge:MeOx interfaces
in Microelectronic Engineering
Li H
(2014)
Dopant compensation in HfO2 and other high K oxides
in Applied Physics Letters
Description | We discovered the best ways to passivate Ge surfaces by oxides, for CMOS devices. The oxides and the interfaces were characterised by our partners Liverpool University. We also published a model for the oxidation of Ge in APL which is different to the standard Deal Grove model of the oxidation on Si. This explains the unusual T and pressure dependence of the oxidation rate. Large scale review article with US author. |
Exploitation Route | From ALD precursor chemicals also studied at Liverpool University. Greater understanding of Ge/GeO2 interface. Recent APL paper gives understanding of why the Ge/GeO2 interface differs from the Si/SiO2 interface, the fundamental interface behind CMOS electronics, is the different diffusion mechanism of O to the interface in GeO2 |
Sectors | Electronics |
Description | Forming collaborations with other non-UK partners, and interactions with supporting partners. |
First Year Of Impact | 2014 |
Sector | Electronics |
Impact Types | Economic |