Next Generation Resist Technology for the Semiconductor Industry
Lead Research Organisation:
University of Birmingham
Department Name: Chemical Engineering
Abstract
The push for electronics miniaturisation is as strong as ever. However, the current microchip fabrication method, photolithography (etching lines/wires using optical wavelengths of light), is reaching its limit, and is not sustainable beyond 2016. The leading contender to continue past 2016 is Extreme Ultra Violet lithography (EUVL). However, there is currently no EUVL compatible 'resist material' that meets the industry's performance needs. The 'resist material' in this context, is the material that creates the masks from which the wires are etched. We have developed such a material and are now working with Irresistible Materials to bring our resist to market.
People |
ORCID iD |
| Alex Robinson (Principal Investigator) |
Publications
Frommhold A
(2012)
Fullerene-based spin-on-carbon hardmask
in Microelectronic Engineering
Manyam J
(2012)
Positive-tone chemically amplified fullerene resist
| Description | We have transferred the lab scale production of the material to commercial scale. We have improved the EUV resolving capabilities of the material to better than 35 nm halfpitch. We have identified issues with the dissolution and etching characteristics of the primary material and designed and synthesised a new phenolic derivative to replace the PEG derivative of fullerene that addresses these issues successfully We have developed a new fullerene based hardmask material for trilayer etching of high aspect ratio silicon nanostructures |
| Exploitation Route | Approaches to a number of commercial end users and manufacturers are currently in progress. The fullerene resist is being exploited in collaboration with the company Irresistible Materials who have licenced the IPR The hardmask invention is the focus on new IPR filled this year. |
| Sectors | Electronics |
| Description | The aim of this grant has been to move the fullerene based resist from the laboratory results gained before the project start toward a full scale prototype ready to industrial usage through the development of scale-up, improved understanding of the EUV behaviour and measurement of secondary metrics. During the project we have worked closely with Irresistible Materials and their synthetic chemist to develop a reliable scale up of the lab based materials. The industrially produced resist materials are now matching (and in one case exceeding) the capabilities of the lab based materials. A new subgroup of fullerene materials to improve etch durability and dissolution characteristics has been developed Simultaneously extensive testing of the EUV properties is leading to continuing improvements to the EUV performance. Additionally a new application of the material in the field of plasma etching has been discovered. Use of the methanofullerene material as the spin on carbon layer in a trilayer plasma etching scheme has allowed the etching of high aspect ratio features with resolution of less than 30 nm. This has led to the filling of an additional patent. Finally this project has effectively strengthened the collaboration between the University of Birmingham and Irresistible Materials, who have seconded a researcher into the University. The collaboration will continue after the end of the grant, and IM will be sponsoring an additional research fellow to assist with this. A PhD student has received training in the techniques. Beneficiaries: Direct benefits to our collaborating partner Irresistible Materials, with longer term benefits anticipated in the Semiconductor Industry Contribution Method: The research allowed us to move the lab scale production of the materials to a larger commercial scale production. Additional improvements in the material were then undertaken on the basis of results from this research. |
| First Year Of Impact | 2015 |
| Sector | Electronics |
| Impact Types | Cultural |
| Description | A Fullerene Resist to Enable Next Generation Semiconductor Fabrication |
| Amount | £75,320 (GBP) |
| Funding ID | EP/K503873/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | |
| Description | Irresistible Materials Ltd |
| Amount | £37,200 (GBP) |
| Organisation | Irresistible Materials Ltd |
| Sector | Private |
| Country | United Kingdom |
| Start | |
| Description | Irresistible Materials Ltd |
| Amount | £37,200 (GBP) |
| Organisation | Irresistible Materials Ltd |
| Sector | Private |
| Country | United Kingdom |
| Start | 06/2012 |
| End | 05/2013 |
| Description | Knowledge Transfer Secondment |
| Amount | £66,671 (GBP) |
| Funding ID | KTS4/0910/01 |
| Organisation | University of Birmingham |
| Sector | Academic/University |
| Country | United Kingdom |
| Start | |
| Description | Technology Strategy Board |
| Amount | £100,000 (GBP) |
| Organisation | Innovate UK |
| Sector | Public |
| Country | United Kingdom |
| Start | |
| Title | Phenolic Methanofullerene Derivatives |
| Description | A new family of methanofullerene derivatives has been developed as part of this work. The new material replaces the polyethylene glycol chains developed previously with a phenolic functionality. Approximately 15 variants of the material have been developed over the course of the project to date. The replacement of the PEG with the phenolic addends should help with dissolution after exposure and crosslinking capability. |
| Type Of Technology | New Material/Compound |