Atomic Layer Interface Engineering for Nanoelectronics (ALIEN): Contacts
Lead Research Organisation:
University of Cambridge
Department Name: Engineering
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Organisations
People |
ORCID iD |
| John Robertson (Principal Investigator) |
Publications
Guo Y
(2015)
Vacancy and Doping States in Monolayer and bulk Black Phosphorus.
in Scientific reports
Guo Y
(2015)
3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides.
in ACS applied materials & interfaces
Guo Y
(2015)
Schottky barrier heights and band alignments in transition metal dichalcogenides
in Microelectronic Engineering
Guo Y
(2015)
Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
in Applied Physics Letters
Li H
(2014)
Behaviour of hydrogen in wide band gap oxides
in Journal of Applied Physics
Lin L
(2012)
Control of Schottky barrier heights by inserting thin dielectric layers
in Applied Physics Letters
Lin L
(2012)
Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning
in Applied Physics Letters
Lin L
(2012)
Passivation of interfacial defects at III-V oxide interfaces
in Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Robertson J
(2013)
Band offsets, Schottky barrier heights, and their effects on electronic devices
in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
| Description | This grant studies how to control the Schottky barrier heights at metal-semiconductor interfaces, in order to minimise the contact resistance for n- and p-type semiconductors. Discovery of ways to modulate Schottky barrier height. |
| Exploitation Route | semiconductor device fabrication. |
| Sectors | Electronics |
| Description | Good collaboration, and progressing to plan. Many papers. Entry to new subject areas such as metal dichalcogenides electronic devices. |
| First Year Of Impact | 2011 |
| Sector | Electronics |
| Impact Types | Economic |