Silicon based QD light sources and lasers
Lead Research Organisation:
University of Warwick
Department Name: Physics
Abstract
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People |
ORCID iD |
| Richard Beanland (Principal Investigator) |
Publications
George I
(2015)
Dislocation filters in GaAs on Si
in Semiconductor Science and Technology
Karomi I
(2015)
InAsP quantum dot lasers grown by MOVPE.
in Optics express
Li K
(2019)
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate
in Journal of Crystal Growth
Lu Q
(2019)
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
in Solar Energy Materials and Solar Cells
Orchard J
(2017)
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
in ACS Photonics
Orchard JR
(2016)
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.
in Optics express
Tang M
(2016)
Optimizations of Defect Filter Layers for 1.3-µm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
in IEEE Journal of Selected Topics in Quantum Electronics
Ward T
(2014)
Design rules for dislocation filters
in Journal of Applied Physics
| Description | My part in this work was to understand the defects that prevent materials with different properties from being combined effectively and find ways to control them. By designing layers of material with different internal strains, these defects can be made to combine and annihilate, producing high quality material. |
| Exploitation Route | Ideally we would like to be able to combine, for example, GaAs with silicon, leading to new types of computer chips that communicate using light rather than electricity. |
| Sectors | Aerospace, Defence and Marine,Chemicals,Creative Economy,Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy,Manufacturing, including Industrial Biotechology,Culture, Heritage, Museums and Collections,Pharmaceuticals and Medical Biotechnology,Security and Diplomacy,Other |
| Description | Modelling, design and verification of low defect density material for III-V detectors |
| Amount | £12,000 (GBP) |
| Organisation | IQE Europe Limited |
| Sector | Private |
| Country | United Kingdom |
| Start | 08/2015 |
| End | 08/2016 |
| Description | IQE |
| Organisation | IQE Europe Limited |
| Country | United Kingdom |
| Sector | Private |
| PI Contribution | Modelling, design and analysis of material for III-V detectors |
| Collaborator Contribution | Growth of material and device design |
| Impact | Patent application in progress. Licensing agreement between Warwick university and IQE in place. Work stuill in progress. |
| Start Year | 2015 |