Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Lead Research Organisation:
University of Bath
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
People |
ORCID iD |
| D Allsopp (Principal Investigator) | |
| Wang Nang Wang (Co-Investigator) |
Publications
Huang C
(2013)
Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy
in Philosophical Magazine
Hugues M
(2013)
Strain evolution in GaN nanowires: From free-surface objects to coalesced templates
in Journal of Applied Physics
Jiang Q
(2017)
Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy
in Journal of Physics D: Applied Physics
Jiang Q
(2013)
The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates
in Semiconductor Science and Technology
Jiang Q
(2013)
Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction
in Japanese Journal of Applied Physics
Jiang Q
(2013)
Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer
in Japanese Journal of Applied Physics
Ki P
(2016)
Stress Engineering During the Fabrication of InGaN/GaN Vertical Light Emitting Diodes for Reducing the Quantum Confined Stark Effect
in IEEE Transactions on Electron Devices
Webster R
(2015)
Electron microscopy of gallium nitride growth on polycrystalline diamond
in Semiconductor Science and Technology
| Description | The mechanism by which crystalline III-Nitride thin films can be grown on polycrystalline diamond substrates (i.e. substrates that lack a long-range epitaxial relationship with the grown III-Nitride semiconductor) hase been identified. Specifically, a very thin SiC film (typically circa 1-15 nanometres thick) forms during the growth of ploycrystalline diamond films on crystalline silicon substrates. This layer is chemically inert to the processes used to remove the silocon starting substrate and contains sufficient structural information for the growth of crystalline III-Nitride layers to occur. |
| Exploitation Route | 1. Develop the processes identified in the publication found at http://iopscience.iop.org/article/10.1088/1361-6463/aa60a0 to enable the groth of thicker GaN layer layers and thereby reduce the residual defect density to a level compatible with commercial power transistor and radio frequency/microwave frequency transistor manufacture. 2. Investigate if other, more controlled methods of "imprinting" a very thing film (circa 1 nanometre thickness or less) containing the necessary structural information for nucleating the growth of crystalline AlN onto the polycrystalline diamond can be developed. |
| Sectors | Aerospace, Defence and Marine,Electronics,Energy,Transport |
| URL | http://iopscience.iop.org/article/10.1088/1361-6463/aa60a0 |